Document Details

Document Type : Article In Journal 
Document Title :
Process Optimization of GaN Nanorods Fabricated Using CH4/H-2/SF6 Inductively Coupled Plasma Etch Technology
Process Optimization of GaN Nanorods Fabricated Using CH4/H-2/SF6 Inductively Coupled Plasma Etch Technology
 
Subject : physics 
Document Language : English 
Abstract : We developed a new etch process for GaN and related materials, which utilizes CH4/H-2/SF6 plasma. This kind of plasma is both less toxic and corrosive than that based on chlorine containing plasmas. Firstly, conventional CH4/H-2/Ar plasma was investigated by varying the CH4/H-2 ratio. Although a smooth surface of the etched nanorods is obtained using this plasma, the deposition of carbonated polymer films on the surfaces caused by this plasma resulted in a low etch rate. Interestingly, more control of this carbonated film deposition has been achieved by adding SF6, which in turn resulted in a relatively high etch rate and well aligned nanorods. Thus, this top-down method could be potentially used in processing of advanced devices like laser diodes, light emitting diodes, and three dimensional transistors. 
ISSN : 1947-2935 
Journal Name : SCIENCE OF ADVANCED MATERIALS 
Volume : 7 
Issue Number : 12 
Publishing Year : 1436 AH
2015 AD 
Article Type : Article 
Added Date : Tuesday, August 15, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
M.A.M Al-SuleimanAl-Suleiman, M.A.M InvestigatorDoctoratemaid.suleiman@gmail.com
Yas Al-HadeethiAl-Hadeethi, Yas ResearcherDoctorate 
A Waag,Waag,, A Researcher  

Files

File NameTypeDescription
 42636.pdf pdf 

Back To Researches Page